| PART |
Description |
Maker |
| ERA-5XSM |
Monolithic Amplifier 50OHM, Broadband, DC to 4 GHz
MONOLITHIC AMPLIFIERS 50 BROADBAND DC to 8 GHz
|
MINI[Mini-Circuits]
|
| VNA-21 |
Temp.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| MSWT-4-20 |
50ohm Transfer, DC to 2.0 GHz Low Video Leakage 0 MHz - 2000 MHz RF/MICROWAVE TRANSFER SWITCH, 2.2 dB INSERTION LOSS
|
Mini-Circuits
|
| VNA-23 |
.: -25C to 70C/40C to 70C, Low Ripple & Noise, High Efficiency up to 76%,Single & Dual Ouputs, Regulated, Switching
High Directivity Monolithic Amplifier 50OHM 0.5 to 2.5 GHz
|
MINI[Mini-Circuits]
|
| ADAPTENUATORS SM-BM-6 NF-BF-10 NF-BF-3 NF-BF-6 NF- |
50OHM, 3,6,10 dB, DC to 2000 MHz Adaptenuators 0 MHz - 2000 MHz RF/MICROWAVE FIXED ATTENUATOR
50OHM, 3,6,10 dB, DC to 2000 MHz Adaptenuators
50OHM/ 3/6/10 dB/ DC to 2000 MHz Adaptenuators
50OHM / 3 /6 /10 dB / DC to 2000 MHz Adaptenuators
|
衰减
MINI[Mini-Circuits]
|
| 87310B 87300C 87300D 87301B 87300B 87301D 87301C 8 |
87310B Coaxial Hybrid Coupler, 90 Degree, 1 GHz to 18 GHz
87300C Coaxial Directional Coupler, 1 GHz to 26.5 GHz
87300D Coaxial Directional Coupler, 6 to 26.5 GHz
87301B Coaxial Directional Coupler, 10 to 46 GHz
87300B Coaxial Directional Coupler, 1 GHz to 20 GHz
87301D Coaxial Directional Coupler, 1 GHz to 40 GHz
87301C Coaxial Directional Coupler, 10 to 50 GHz
87301E Coaxial Directional Coupler, 2 GHz to 50 GHz
|
Agilent (Hewlett-Packard)
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRF9640S IRF9640STRL IRF9640SPBF IRF9640STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
|
IRF[International Rectifier]
|
| FAR-F5KA-897M50-D4DC |
EGSM Tx (50/50ohm Unbalance)
|
Fujitsu Component Limited.
|
| FAR-F5KB-836M50-B4ER |
W-CDMA V (850) Tx (100/50ohm)
|
Fujitsu Component Limited.
|
| RFP-250375-4X50-2 |
Chip Terminations 150 Watts, 50ohm
|
Anaren Microwave
|
